Method for preventing side-lobes in photolithography
US6465160B1 · kind B1 · utility
3Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2000 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Feb 24, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/26
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for the mitigation of the generation of side-lobes in a photolithography process is described. The method includes the steps of forming a photoresist layer on a semiconductor substrate. An exposure process is conducted on the photoresist layer with a phase-shifting mask, transferring the pattern of the mask on the photoresist layer. After this, a post-exposure baking process is conducted on the photoresist layer after it has been exposed, followed by performing a development process to complete the patterning of the photoresist layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.