Method of forming a self-aligned antifuse link
US6465282B1 · kind B1 · utility
20Cited by
8References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 28, 2001 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Sep 28, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An antifuse (e.g., 130) is formed in an integrated circuit through the use of a block mask (e.g., photoresist 120) during in situ antifuse dielectric formation. Generally, the mask allows self-aligned oxidation of an oxidizable metal (e.g., aluminum 104) to form the antifuse dielectric (e.g., aluminum oxide 124), while preventing oxidation of non-programmable or fixed connections (e.g., conductive stack 128). The number of mask, deposition, or etching steps may be reduced relative to prior art methods. In addition, a fixed connection may be formed during the formation of and at the same level as the antifuse link.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.