Method of manufacturing a semiconductor component having a capacitor
US6465297B1 · kind B1 · utility
11Cited by
8References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 5, 2000 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Mar 8, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor component includes forming a first capacitor electrode (126) over a substrate (110), forming a capacitor dielectric layer (226) over the first capacitor electrode, and forming a second capacitor electrode (326) over the capacitor dielectric layer. The capacitor dielectric layer is made of aluminum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.