Method for grinding a wafer back
US6465330B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 18, 1999 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Aug 18, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/2809
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A surface protective sheet for semiconductor wafer, used in wafer back grinding during a process comprising (1) forming grooves on the surface a of semiconductor wafer furnished with a circuit so that the cutting depth of the grooves are smaller than the thickness of the wafer and (2) grinding the back of the wafer so that the thickness of the wafer is reduced and that the wafer is finally divided into individual chips. The above surface protective sheet is comprised of a substrate and, superimposed thereon, a pressure sensitive adhesive layer having an elastic modulus of at least 1.0×105 Pa at 40° C. This surface protective sheet is applicable to a process which enables producing extremely thin IC chips with high yield.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.