Method of making MOS transistor with high doping gradient under the gate
US6465332B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2000 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Jan 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention is directed to a method of manufacturing an area of a first type of conductivity extending a depth into a semiconductor substrate and having a doping gradient as a function of the depth into the semiconductor substrate. The method comprises acts of providing a semiconductor substrate of the first type of conductivity; implanting nitrogen in an upper surface of the semiconductor substrate, with a dose in a range of between approximately 5.1013 and 5.1015 at./cm2, annealing the semiconductor substrate; and growing an epitaxial layer on the substrate of the first type of conductivity having a doping level lower than the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.