Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers
US6465366B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2000 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Sep 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0276
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a silicon carbide layer for use in integrated circuit fabrication is disclosed. The silicon carbide layer is formed by reacting a gas mixture comprising a silicon source, a carbon source, and an inert gas in the presence of an electric field. The electric field is generated using mixed frequency radio frequency (RF) power. The silicon carbide layer is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the silicon carbide layer is used as a hardmask for fabricating integrated circuit structures such as, for example, a damascene structure. In another integrated circuit fabrication process, the silicon carbide layer is used as an anti-reflective coating (ARC) for DUV lithography.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.