Method and structure for improving electromigration of chip interconnects
US6465376B2 · kind B2 · utility
14Cited by
16References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 18, 1999 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Aug 18, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/891
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A microstructure comprises a conductive layer of aluminum, copper or alloys thereof on a substrate wherein the layer comprises metal grains at least about 0.1 microns and barrier material deposited in the grainboundaries of the surface of the metal is provided along with a method for its fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.