Charge-particle beam lithography system of blanking aperture array type
US6465796B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 1999 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Jul 9, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0458
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Disclosed is a charged-particle beam lithography system in which deterioration of a BAA chip is prevented without a reduction in the magnitude of a charged-particle beam used for exposure. The charged-particle beam lithography system has a charged-particle beam emitter source and a chip having a plurality of apertures arrayed therein. The plurality of apertures shapes a charged-particle beam emitted from the emitter source so that the cross section thereof will have a predetermined shape. The charged-particle beam lithography system uses the charged-particle beam having passed through the apertures to pattern an exposed sample. The charged-particle beam lithography system includes a mask having a plurality of apertures bored therein. The plurality of apertures is arrayed in the same manner as the plurality of apertures arrayed in the chip, and has a size that is any multiple of the size of the apertures of the chip. The mask is located on a path, along which the charged-particle beam travels, between the charged-particle beam emitter source and chip.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.