MOS-transistor structure with a trench-gate-electrode and a limited specific turn-on resistance and method for producing an MOS-transistor structure

US6465843B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Franz Hirler · Isen, DE
• Wolfgang Werner · Hersbruck, DE

Key dates

• Filing date: Apr 27, 2001
• Grant date: Oct 15, 2002
• Expiry date: Apr 27, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/393

Abstract

MOS transistor structure having a trench gate electrode and a reduced on resistance, and methods for fabricating a MOS transistor structureA MOS transistor structure having a trench gate electrode and a reduced on resistance is described, the integral of the doping concentration of the body region in the lateral direction between two adjacent drift regions being greater than or equal to the integral of the doping concentration in a drift region in the same lateral direction.Furthermore, methods for fabricating a MOS transistor structure are disclosed, body regions and drift regions being produced by epitaxial growth and implantation, repeated epitaxial growth or by filling trenches with doped conduction material.