Power diode structure

US6465863B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Gerald Deboy · Klagenfurt, AT
• Jens-Peer Stengl · Hersbruck, DE

Key dates

• Filing date: Nov 28, 2000
• Grant date: Oct 15, 2002
• Expiry date: Nov 28, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002

Abstract

The invention relates to a power diode structure having improved dynamic characteristics which comprises a semiconductor body of a first conduction type. A semiconductor zone of the other conduction type which is contrary to the first conduction type is embedded in the one surface of said semiconductor body. The power diode also comprises an anode which contacts the semiconductor zone, and has a cathode which contacts the semiconductor body. At least one floating region of the second conduction type is provided in the semiconductor body.