Contact structure for electrical communication with contact targets
US6466043B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2002 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Jan 28, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R1/07342
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A contact structure for testing a semiconductor wafer, a packaged LSI or a printed circuit board is formed on a planar surface of a substrate by a photolithography technology. The contact structure is formed of a silicon base having an inclined support portion created through an anisotropic etching process, an insulation layer formed on the silicon base and projected from the inclined support, and a conductive layer made of conductive material formed on the insulation layer so that a contact beam is created by the insulation layer and the conductive layer. The contact beam exhibits a spring force in a transversal direction of the contact beam to establish a contact force when the tip of the beam portion pressed against a contact target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.