Method and apparatus for thermal control of a semiconductor substrate
US6466426B1 · kind B1 · utility
28Cited by
2References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 3, 1999 |
| Grant date | Oct 15, 2002 |
| Priority date | — |
| Expiry date | Aug 3, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T279/23
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor wafer processing apparatus, and more specifically, a semiconductor substrate support pedestal having a substrate support, an isolator, and first and second heat transfer plates for providing a controllable, uniform temperature distribution across the diameter of a semiconductor wafer. A semiconductor wafer placed upon the pedestal is maintained uniformly at a predetermined temperature by heating the wafer with one or more electrodes embedded within the substrate support and cooling the wafer with a fluid passing through the first and second heat transfer plates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.