Predictive wafer temperature control system and method
US6468384B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 9, 2000 |
| Grant date | Oct 22, 2002 |
| Priority date | — |
| Expiry date | Nov 9, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/2001
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides plasma processing systems and methods for providing a set-point temperature for substrates during plasma processing by controlling clamping force or RF power. The plasma processing system includes a plasma chamber, a controller, and an electrostatic power supply. The plasma chamber is arranged to receive an RF power and a source gas for producing plasma. The plasma chamber includes an electrostatic chuck for clamping a substrate in place during plasma processing. The electrostatic chuck includes an electrode and a sensor, which is arranged to monitor temperature of the substrate being processed. The controller is coupled to the sensor to receive the substrate temperature and is configured to generate a control signal for driving the substrate temperature to the set-point temperature. The electrostatic power supply is coupled between the controller and the electrode in the electrostatic chuck. The electrostatic power supply receives the control signal from the controller and generates a voltage adapted to clamp the substrate with a clamping force. In this configuration, the electrostatic power supply provides the voltage to the electrode to clamp the s…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.