Sputtering target assembly and method for depositing a thickness gradient layer with narrow transition zone
US6468405B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2000 |
| Grant date | Oct 22, 2002 |
| Priority date | — |
| Expiry date | Aug 18, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02T50/60
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A sputtering target assembly for depositing onto a selected substrate area comprises a target/cathode having a planar sputtering surface including an erosion track area, a collimating shield positioned proximate to the sputtering surface, surrounding at least a portion of the erosion track area, and including an inwardly facing wall, and a blocking shield centrally positioned over the surface of the target/cathode and including an outwardly facing wall, wherein the inwardly facing wall of the collimating shield and the outwardly facing wall of the central blocking shield form an open-ended channel for directing sputtered particles onto the selected substrate area. A method for utilizing the target assembly for selectively depositing a thicker protective overcoat layer on the inner CSS or landing zone relative to the outer data zone of disk-shaped recording media is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.