Backside contact for integrated circuit and method of forming same
US6468889B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2000 |
| Grant date | Oct 22, 2002 |
| Priority date | — |
| Expiry date | Oct 5, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76898
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A contact formed from the backside of an integrated circuit device includes a first conductive layer on a first surface of the integrated circuit device and a second conductive layer on a second surface of the device. The two conductive layers are coupled by way of an opening through the semiconductor substrate separating the two conductive layers. A method for making the backside contact comprises forming the first conductive layer, forming an opening through the semiconductor substrate to expose at least a portion of the underside of the first conductive layer, then filling the opening with a conductive material to provide an electrical contact to the first conductive layer from the backside of the integrated circuit device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.