Patent · US Expired

Method of fabricating semiconductor components

US6468896B2 · kind B2 · utility

21Cited by

7References

11Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thomas Rohr · Aschheim, DE
Christine Dehm · Koblenzer Straße, DE
Carlos Mazure-Espejo · Zorneding, DE

Key dates

Filing date	Dec 29, 2000
Grant date	Oct 22, 2002
Priority date	—
Expiry date	Dec 29, 2020

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/95
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

Disclosed is a method for producing semiconductor elements including a metal layer (10) configured on a semiconductor substrate (5). The inventive method consists of the following steps: a silicon layer (15) is deposited on a metal layer (10); an etch mask is applied in order to structure the silicon layer (1%); the silicon layer is selectively etched (15) using the etch mask (25); and the metal layer (10) is structured in an etching process using a selectively etched silicon layer (15) as a hard mask.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.