Nickel silicide including iridium for use in ultra-shallow junctions with high thermal stability and method of manufacturing the same
US6468901B1 · kind B1 · utility
17Cited by
4References
13Claims
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Key dates
| Filing date | May 2, 2001 |
| Grant date | Oct 22, 2002 |
| Priority date | — |
| Expiry date | May 2, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28518
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit device, and a method of manufacturing the same, including nickel silicide on a silicon substrate fabricated with an iridium interlayer. In one embodiment the method comprises depositing an iridium (Ir) interface layer between the Ni and Si layers prior to the silicidation reaction. The thermal stability is much improved by adding the thin iridium layer. This is shown by the low junction leakage current of the ultra-shallow junction, and by the low sheet resistance of the silicide, even after annealing at 850° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.