Electro-optic sampling probe and measuring method using the same
US6469528B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 30, 1999 |
| Grant date | Oct 22, 2002 |
| Priority date | — |
| Expiry date | Dec 24, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/311
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An electro-optic sampling probe is disclosed, by which both faces of an IC wafer can be measured without moving the IC wafer. In the probe, an excitation optical system is provided at the back face side of a back-face excitation type IC wafer. The back face of the IC wafer is irradiated by light output from the excitation optical system, and simultaneously, the electric signal transmitted through wiring on the IC wafer is measured by using light output from an electro-optic sampling optical system provided at the front face side of the IC wafer. If the excitation optical system is substituted with an electro-optic sampling optical system, an IC wafer having wiring in both faces can also be measured.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.