Capacitor for semiconductor configuration and method for fabricating a dielectric layer therefor

US6469887B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Harald Bachhofer · Hersbruck, DE
• Thomas Haneder · Hersbruck, DE
• Reinhard Stengl · Stadtbergen, DE
• Wolfgang Hönlein · Unterhaching, DE
• Hans Reisinger · Grünwald, DE

Key dates

• Filing date: Nov 13, 2001
• Grant date: Oct 22, 2002
• Expiry date: Nov 13, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0228
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A capacitor for a semiconductor configuration and a method for producing a dielectric layer for the capacitor. The dielectric layer consists of cerium oxide, zirconium oxide, hafnium oxide or various films of the materials.