Inductively-coupled-plasma ionized physical-vapor deposition apparatus, method and system
US6471830B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 3, 2000 |
| Grant date | Oct 29, 2002 |
| Priority date | — |
| Expiry date | Oct 3, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32568
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system and related method are disclosed for performing an inductively-coupled-plasma ionized physical-vapor deposition (“PVD”) process for depositing material layers onto a substrate. Within a PVD process chamber are contained a target/cathode assembly, a chuck assembly, a process medium, a variable height inductively-coupled (“VHIC”) ionization coil segment and an antenna actuator for controlling the relative vertical position of the variable height inductively-coupled ionization coil segment. The VHIC coil segment can be contained within a dielectric liner and can be covered by a multi-slotted grounded electrostatic shield. The VHIC ionization coil segment can comprise one or more zones comprised of one or more coil loops powered by one or more radio-frequency power supplies. Each zone can be powered through an adjustable passive electrical component for providing multiple inductive zone operations during a deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.