Determination of effective oxide thickness of a plurality of dielectric materials in a MOS stack
US6472236B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 13, 2001 |
| Grant date | Oct 29, 2002 |
| Priority date | — |
| Expiry date | Jul 13, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
System and method for determining a respective effective oxide thickness for each of first and second dielectric structures that form a MOS (metal oxide semiconductor) stack. A first plurality of test MOS (metal oxide semiconductor) stacks are formed, and each test MOS stack includes a respective first dielectric structure comprised of a first dielectric material and a respective second dielectric structure comprised of a second dielectric material. A respective deposition time for forming the respective first dielectric structure corresponding to each of the first plurality of test MOS stacks is varied such that a respective first effective oxide thickness of the respective first dielectric structure varies for the first plurality of test MOS stacks. A respective second effective oxide thickness of the respective second dielectric structure is maintained to be substantially same for each of the first plurality of test MOS stacks. A respective total effective oxide thickness, EOTMOS, is measured for each of the first plurality of test MOS stacks. A first graph having total effective oxide thickness as a first axis and having deposition time for forming the first dielectric structur…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.