Nian Yang
83Patents
12h-index
56Co-inventors
87Inventor score
Filing activity: Jul 13, 2001 → Sep 24, 2020
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7042766B1 | Method of programming a flash memory device using multilevel charge storage | Physics | 97 | Expired |
| US6570787B1 | Programming with floating source for low power, low leakage and high density flash memory devices | Physics | 51 | Expired |
| US6461905B1 | Dummy gate process to reduce the Vss resistance of flash products | Electricity | 44 | Expired |
| US6643185B1 | Method for repairing over-erasure of fast bits on floating gate memory devices | Physics | 34 | Expired |
| US6660588B1 | High density floating gate flash memory and fabrication processes therefor | Electricity | 26 | Expired |
| US6606273B1 | Methods and systems for flash memory tunnel oxide reliability testing | Physics | 26 | Expired |
| US6987696B1 | Method of improving erase voltage distribution for a flash memory array having dummy wordlines | Physics | 26 | Expired |
| US7845608B1 | Mounting apparatus for electronic device | Emerging Cross-Sectional Technologies | 25 | Active |
| US7724075B2 | Method to provide a higher reference voltage at a lower power supply in flash memory devices | Physics | 20 | Active |
| US7345916B2 | Method and apparatus for high voltage operation for a high performance semiconductor memory device | Physics | 19 | Active |
| US6828623B1 | Floating gate memory device with homogeneous oxynitride tunneling dielectric | Electricity | 18 | Expired |
| US10567407B2 | Method and system for detecting malicious web addresses | Electricity | 15 | Active |
| USD624913S1 | Thin client | General | 11 | Expired |
| US7957204B1 | Flash memory programming power reduction | Physics | 10 | Expired |
| US6812514B1 | High density floating gate flash memory and fabrication processes therefor | Electricity | 9 | Expired |
| US7352626B1 | Voltage regulator with less overshoot and faster settling time | Physics | 8 | Expired |
| US6486682B1 | Determination of dielectric constants of thin dielectric materials in a MOS (metal oxide semiconductor) stack | Electricity | 8 | Expired |
| US6825526B1 | Structure for increasing drive current in a memory array and related method | Electricity | 7 | Expired |
| US7505298B2 | Transfer of non-associated information on flash memory devices | Physics | 7 | Active |
| US6764920B1 | Method for reducing shallow trench isolation edge thinning on tunnel oxides using partial nitride strip and small bird's beak formation for high performance flash memory devices | Electricity | 7 | Expired |
| US6472236B1 | Determination of effective oxide thickness of a plurality of dielectric materials in a MOS stack | Electricity | 7 | Expired |
| US6991987B1 | Method for producing a low defect homogeneous oxynitride | Electricity | 7 | Expired |
| US6797650B1 | Flash memory devices with oxynitride dielectric as the charge storage media | Electricity | 6 | Expired |
| US7626882B2 | Flash memory device with external high voltage supply | Physics | 6 | Active |
| US6717850B1 | Efficient method to detect process induced defects in the gate stack of flash memory devices | Physics | 6 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.