Manufacturing method and integrated microstructures of semiconductor material and integrated piezoresistive pressure sensor having a diaphragm of polycrystalline semiconductor material
US6472244B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 27, 2000 |
| Grant date | Oct 29, 2002 |
| Priority date | — |
| Expiry date | Nov 27, 2020 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0742
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The method inlcudes the steps of forming a sacrificial buried region of insulating material on a substrate of monocrystalline semiconductor material, epitaxially growing a first semiconductor material layer on the substrate, the first semiconductor material layer including a polycrystalline region over the sacrificial buried region and a monocrystalline region elsewhere, the substrate and the semiconductor material layer surrounding the sacrificial buried region on all sides, and removing the sacrificial buried region. The portion of the polycrystalline region surrounded by the trench thus forms a suspended structure separated and isolated thermally from the rest of the semiconductor material layer. Using microelectronics processes, electronic components are formed in the monocrystalline region, and dedicated regions are formed at the suspended structure, so that the electronic components are integrated in the same chip with static, kinematic or dynamic microstructures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.