Method of forming a contact plug for a semiconductor device
US6472303B1 · kind B1 · utility
7Cited by
17References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2001 |
| Grant date | Oct 29, 2002 |
| Priority date | — |
| Expiry date | Dec 28, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76895
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device having the steps of forming an insulating layer on a silicon substrate, forming a contact hole on the insulating layer, forming a selective silicon layer in the contact hole, and forming a selective conductive plug on the selective silicon layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.