Method of via patterning utilizing hard mask and stripping patterning material at low temperature
US6472315B2 · kind B2 · utility
13Cited by
6References
6Claims
0Family size
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Key dates
| Filing date | Mar 14, 2001 |
| Grant date | Oct 29, 2002 |
| Priority date | — |
| Expiry date | Mar 14, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.