Method for manufacturing capacitor of semiconductor memory device by two-step thermal treatment
US6472319B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 9, 2001 |
| Grant date | Oct 29, 2002 |
| Priority date | — |
| Expiry date | May 9, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/694
Abstract
A method for manufacturing a capacitor of a semiconductor memory device by a two-step thermal treatment is provided. A lower electrode is formed on a semiconductor substrate. A dielectric layer is formed over the lower electrode. An upper electrode formed of a noble metal is formed over the dielectric layer. The resultant having the upper electrode undergoes a first thermal treatment under a first atmosphere including oxygen at a first temperature which is selected to be within a range of 200-600° C., which is lower than the oxidation temperature of the upper electrode. The first thermally treated resultant undergoes a second thermal treatment under a second atmosphere without oxygen at a second temperature which is selected to be within a range of 300-900° C., which is higher than the first temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.