Trench MOSFET with structure having low gate charge
US6472708B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 31, 2000 |
| Grant date | Oct 29, 2002 |
| Priority date | — |
| Expiry date | Nov 17, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/908
Abstract
A trench MOSFET includes a plurality of trench segments in an upper surface of an epitaxial layer, extending through a second conductivity type region into a first conductivity type epitaxial region, each segment at least partially separated from an adjacent segment by a terminating region, and the trench segments defining a plurality of polygonal body regions within the second conductivity type region. A first insulating layer at least partially lines each trench and a plurality of first conductive regions are provided within the trench segments adjacent to the first layer. Each of the conductive regions is connected to an adjacent conductive region by a connecting conductive region, overlying the terminating region, that bridges at least one of the terminating regions, and a plurality of first conductivity source regions are within upper portions of polygonal body regions and adjacent the trench segments, the source regions positioned outside the terminating regions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.