Method for producing a contact structure
US6472890B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2002 |
| Grant date | Oct 29, 2002 |
| Priority date | — |
| Expiry date | Jan 28, 2022 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R1/07342
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method of producing a contact structure for electrical communication with a contact target. The method includes the steps of providing a silicon substrate cut in a (100) crystal plane, applying a first photolithography process on an upper surface of the silicon substrate for forming an etch stop layer, forming a first insulation layer on the etch stop layer, forming a second insulation layer on a bottom surface of the silicon substrate, applying a second photolithography process on the second insulation layer for forming an etch window, performing an anisotropic etch on the silicon substrate through the etch window for forming a base portion of a contactor, depositing conductive material on the first insulation layer for forming a conductive layer in a beam shape projected from the base portion, and mounting a plurality of contactors produced in the foregoing steps on a contact substrate in predetermined diagonal directions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.