Patent · US Expired

MRAM configuration

US6473335B2 · kind B2 · utility

11Cited by

6References

5Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thomas Böhm · Zorneding, DE
Helmut Kandolf · Hersbruck, DE
Stefan Lammers · Hersbruck, DE

Key dates

Filing date	Jul 3, 2001
Grant date	Oct 29, 2002
Priority date	—
Expiry date	Jul 3, 2021

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/16
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A magneto-resistive random access memory (MRAM) configuration is described in which line driver circuits are respectively assigned via connecting nodes to two memory cell arrays, with the result that the area for the driver circuits can practically be halved. Therefore a space-saving architecture and a more efficient MRAM configuration is obtained.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.