Stefan Lammers
26Patents
9h-index
19Co-inventors
64Inventor score
Filing activity: Nov 1, 1999 → Jan 12, 2005
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6819142B2 | Circuit for transforming a differential mode signal into a single ended signal with reduced standby current consumption | Electricity | 60 | Expired |
| US6353562B2 | Integrated semiconductor memory with redundant units for memory cells | Physics | 35 | Expired |
| US7239537B2 | Method and apparatus for current sense amplifier calibration in MRAM devices | Physics | 22 | Expired |
| US6594191B2 | Segmented write line architecture | Physics | 20 | Expired |
| US6539506B1 | Read/write memory with self-test device and associated test method | Physics | 18 | Expired |
| US6577527B2 | Method for preventing unwanted programming in an MRAM configuration | Physics | 15 | Expired |
| US6847225B2 | CML (current mode logic) OCD (off chip driver)—ODT (on die termination) circuit for bidirectional data transmission | Electricity | 12 | Expired |
| US6473335B2 | MRAM configuration | Physics | 11 | Expired |
| US6545900B2 | MRAM module configuration | Electricity | 10 | Expired |
| US6744662B2 | Magnetoresistive memory (MRAM) | Physics | 9 | Expired |
| US6594176B2 | Current source and drain arrangement for magnetoresistive memories (MRAMs) | Emerging Cross-Sectional Technologies | 8 | Expired |
| US6825707B2 | Current mode logic (CML) circuit concept for a variable delay element | Electricity | 8 | Expired |
| US6781896B2 | MRAM semiconductor memory configuration with redundant cell arrays | Physics | 5 | Expired |
| US6639829B2 | Configuration and method for the low-loss writing of an MRAM | Physics | 3 | Expired |
| US6930915B2 | Cross-point MRAM array with reduced voltage drop across MTJ's | Physics | 3 | Expired |
| US6496423B2 | Chip ID register configuration | Electricity | 3 | Expired |
| US6618306B2 | Semiconductor memory device having row and column redundancy circuit and method of manufacturing the circuit | Physics | 2 | Expired |
| US7057924B2 | Precharging the write path of an MRAM device for fast write operation | Physics | 2 | Expired |
| US6853229B2 | Circuit for transforming a single ended signal into a differential mode signal | Electricity | 1 | Expired |
| US6538950B2 | Integrated memory and corresponding operating method | Physics | 1 | Expired |
| US6972989B2 | Reference current distribution in MRAM devices | Physics | 1 | Expired |
| US6459631B2 | Configuration for implementing redundancy for a memory chip | Physics | 1 | Expired |
| US6657916B2 | Integrated memory with memory cell array | Physics | 1 | Expired |
| US7158405B2 | Semiconductor memory device having a plurality of memory areas with memory elements | Physics | 1 | Expired |
| US6816406B2 | Magnetic memory configuration | Physics | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.