Memory device having memory cells with magnetic tunnel junction and tunnel junction in series
US6473337B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2001 |
| Grant date | Oct 29, 2002 |
| Priority date | — |
| Expiry date | Oct 24, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory device includes dual tunnel junction memory cells having a magnetic tunnel junction in series with a tunnel junction. The magnetic tunnel junction can be changed from a first resistance state to a second resistance state during a write operation. The magnetic tunnel junction can have a differing resistance-voltage characteristic than the tunnel junction, and the differing resistance-voltage characteristics allow the magnetic tunnel junction to be blown without blowing the tunnel junction during a write operation. The change in resistance state of the magnetic tunnel junction changes the resistance of the selected memory cell, which is detectable during a read operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.