Thermal treatment method and apparatus
US6473993B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2000 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Mar 30, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67109
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor wafer is mounted on a susceptor disposed in a processing chamber, the wafer is heated at a temperature on the order of 1000° C. for annealing, and a gas is supplied from a gas supply device disposed opposite to the wafer. When raising the temperature of the wafer and/or when lowering the temperature of the wafer, intra-surface temperature difference is limited to a small value to suppress the occurrence of slips. A gas supply device is divided into sections corresponding to a central part and a peripheral part, respectively, of the wafer to supply the gas at different flow rates onto the central part and the peripheral part, respectively. When raising the temperature of the wafer, for example, a gas of a temperature higher (lower) than that of the wafer is supplied at a flow rate per unit area greater (lower) than that at which the gas is supplied to the peripheral part to the central part. When lowering the temperature of the wafer, for example, a gas of a temperature higher (lower) than that of the wafer is supplied at a flow rate per unit area lower (higher) than that at which the gas is supplied to the peripheral part to the central part.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.