Apparatus and method for improving plasma distribution and performance in an inductively coupled plasma
US6474258B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Apr 23, 2001 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Apr 23, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3408
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A processing system for processing a substrate with a plasma comprises a processing chamber defining a processing space and including a substrate support therein for supporting a substrate in the processing space and a gas inlet for introducing a process gas into said processing space. A plasma source is operable for creating a plasma in the processing space from process gas introduced therein. The plasma source comprises a dielectric window which interfaces with the processing chamber proximate the processing space and an inductive element positioned outside of the chamber and proximate the dielectric window. The inductive element is operable for coupling electrical energy through the dielectric window and into the processing space to create a plasma therein and comprises a variety of alternative designs for providing a dense, uniform plasma.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.