Control of removal rates in CMP
US6475069B1 · kind B1 · utility
9Cited by
3References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 20, 2000 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Dec 31, 2020 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B37/04
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method for CMP polishing with a first step slurry composition selective to a metal in a metal layer to remove the metal at a high removal rate during polishing, and a second step slurry composition selective to a barrier film and least selective to either of an underlying dielectric layer or a metal interconnection structure in the dielectric layer, to remove the barrier film at a high removal rate during polishing, and level a surface of the dielectric layer to the surface of the interconnection structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.