Post-metal etch treatment to prevent corrosion
US6475298B1 · kind B1 · utility
6Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 13, 2000 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Nov 12, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C28/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of improving the post-etch corrosion resistance of aluminum-containing wafers by performing a two-step post-etch passivation sequence which does not involve a plasma. In the first step the pressure is high, relative to typical passivation procedures, and the wafer temperature is relatively low. In the second step, the pressure is ramped down and the wafer temperature is ramped up. This two-step approach results in a more-efficient removal of chlorine from the wafer, and hence improved corrosion resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.