Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US6475356B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 28, 2000 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Jan 28, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3327
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Increased sidewall coverage by a sputtered material is achieved by generating an ionizing plasma in a relatively low pressure sputtering gas. By reducing the pressure of the sputtering gas, it is believed that the ionization rate of the deposition material passing through the plasma is correspondingly reduced which in turn is believed to increase the sidewall coverage by the underlayer. Although the ionization rate is decreased, sufficient bottom coverage of the by the material is maintained. In an alternative embodiment, increased sidewall coverage by the material may be achieved even in a high density plasma chamber by generating the high density plasma only during an initial portion of the material deposition. Once good bottom coverage has been achieved, the RF power to the coil generating the high density plasma may be turned off entirely and the remainder of the deposition conducted without the high density plasma. Consequently, it has been found that good sidewall coverage is achieved in the latter part of the deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.