Semiconductor wafer and vapor growth apparatus
US6475627B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 26, 2000 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Jun 26, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
It is the object of the present invention to provide not only a semiconductor wafer obtained by forming a semiconductor thin film with uniform resistivity and substantially no slip dislocation on a main surface of a semiconductor single crystal substrate having a relatively low dopant concentration, as large as 300 mm or more in diameter but also a vapor phase growth apparatus by means of which such a semiconductor wafer can be produced. A dopant gas is supplied into a reaction chamber 10 through all of the inlet ports 18a to 18f disposed in a width direction of the reaction chamber 10 from a common gas pipe 22a functioning as a main dopant gas pipe. Further, the dopant gas is additionally supplied through inner inlet ports 18a and 18b, and middle inlet ports 18c and 18d, as specific gas inlet ports, into the reaction chamber 10 from first and second auxiliary dopant gas pipes 22b and 22c.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.