Hiroki Ose
8Patents
5h-index
6Co-inventors
48Inventor score
Filing activity: Aug 8, 1997 → Jan 22, 2003
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6814811B2 | Semiconductor wafer and vapor phase growth apparatus | Emerging Cross-Sectional Technologies | 270 | Expired |
| US6454854B1 | Semiconductor wafer and production method therefor | Electricity | 16 | Expired |
| US6475627B1 | Semiconductor wafer and vapor growth apparatus | Emerging Cross-Sectional Technologies | 11 | Expired |
| US6589336B1 | Production method for silicon epitaxial wafer and silicon epitaxial wafer | Electricity | 10 | Expired |
| US5882401A | Method for manufacturing silicon single crystal substrate for use of epitaxial layer growth | Electricity | 7 | Expired |
| US7270708B2 | Susceptor, vapor phase growth apparatus, epitaxial wafer manufacturing apparatus, epitaxial wafer manufacturing method, and epitaxial wafer | Chemistry; Metallurgy | 4 | Expired |
| US7060944B2 | Heat treatment device and heat treatment method | Electricity | 3 | Expired |
| US6746941B2 | Semiconductor wafer and production method therefor | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.