Method of forming integrated circuitry, method of forming a capacitor and method of forming DRAM integrated circuitry

US6475855B1 · kind B1 · utility

Assignee

• Micron Technology, Inc. · US

Inventor

• Fred Fishburn · Boise, US

Key dates

• Filing date: Mar 1, 2000
• Grant date: Nov 5, 2002
• Expiry date: Mar 1, 2020

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S257/908

Abstract

The invention comprises a method of forming integrated circuitry, a method of forming a capacitor, a methods of forming DRAM integrated circuitry, integrated circuitry and DRAM integrated circuitry. In but one implementation, a method of forming integrated circuitry includes forming a first capacitor electrode layer over a substrate. A capacitor dielectric layer is formed over the first capacitor electrode layer. A second capacitor electrode layer is formed over the capacitor dielectric layer and a capacitor is formed comprising the first capacitor electrode layer, the capacitor dielectric layer and the second capacitor electrode layer. A silicon nitride comprising layer is physical vapor deposited over the second capacitor electrode layer. A final passivation layer is formed over the physical vapor deposited silicon nitride comprising layer. In one implementation, integrated circuitry includes a first capacitor electrode layer received over a substrate. A capacitor dielectric layer is received over the first capacitor electrode layer. A second capacitor electrode layer is received over the capacitor dielectric layer. The first capacitor electrode layer, the capacitor dielectric la…