Chemical vapor deposition of niobium barriers for copper metallization
US6475902B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 10, 2000 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Mar 10, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76874
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of depositing a metal nitride material, formed by the decomposition of an organometallic precursor, useful as a barrier layer for an integrated circuit using a conducting metal. More particularly, the invention provides a method of depositing a niobium nitride layer on a substrate for use in copper metallization. In one aspect of the invention an organometallic precursor having the formula Nb(NRR′)5, the formula (NRR′)3Nb═NR″, or combinations thereof, is introduced into a processing chamber in the presence of a processing gas, such as ammonia, and the metal nitride film is deposited by the thermal or plasma enhanced decomposition of the precursor on a substrate. The deposited niobium nitride layer is then exposed to a plasma to remove contaminants, reduce the film's resistivity, and densify the film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.