Semiconductor device having a capacitor and an interconnect layer with molybdenum-containing tungsten
US6476492B2 · kind B2 · utility
2Cited by
3References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 12, 2001 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Jan 12, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/692
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a semiconductor device, which comprises a capacitor component comprising a first electrode, an oxide film with a high dielectric constant or ferroelectricity in contact with the first electrode and a second electrode in contact with the oxide film, as formed in this order, on one principal side of a silicon substrate with a metal wiring layer formed thereon, such problems as breaking of tungsten interconnect, lowering of reliability, lowering of yield, etc. of semi-conductor devices can be solved by using molybdenum-containing tungsten as the material of metal interconnect layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.