Masashi Sahara
34Patents
9h-index
50Co-inventors
78Inventor score
Filing activity: Jan 11, 1996 → Dec 20, 2019
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5904556A | Method for making semiconductor integrated circuit device having interconnection structure using tungsten film | Electricity | 40 | Expired |
| US6897570B2 | Semiconductor device and method of manufacturing same | Electricity | 29 | Expired |
| US7102223B1 | Semiconductor device and a method of manufacturing the same | Electricity | 25 | Expired |
| US6031288A | Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof | Electricity | 25 | Expired |
| US6429476B2 | Semiconductor integrated circuit device | Electricity | 16 | Expired |
| US7759804B2 | Semiconductor device and a method of manufacturing the same | Electricity | 15 | Active |
| US6780757B2 | Semiconductor integrated circuit device and method for making the same | Electricity | 12 | Expired |
| US7504297B2 | Semiconductor device and a method of manufacturing the same | Electricity | 11 | Active |
| US7342302B2 | Semiconductor device and a method of manufacturing the same | Electricity | 9 | Active |
| US6503803B2 | Method of fabricating a semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer | Electricity | 8 | Expired |
| US6472754B2 | Semiconductor device with improved arrangements to avoid breakage of tungsten interconnector | Electricity | 7 | Expired |
| US8183691B2 | Semiconductor device with pads overlapping wiring layers including dummy wiring | Electricity | 6 | Active |
| US7615848B2 | Semiconductor device and a method of manufacturing the same | Electricity | 5 | Active |
| US7189637B2 | Method of manufacturing a semiconductor device having a multi-layered wiring structure | Electricity | 5 | Expired |
| US7705462B2 | Semiconductor device and a method of manufacturing the same | Electricity | 5 | Active |
| US7303986B2 | Semiconductor device and a method of manufacturing the same | Electricity | 4 | Active |
| US7400046B2 | Semiconductor device with guard rings that are formed in each of the plural wiring layers | Electricity | 4 | Active |
| US6268658A | Semiconductor integrated circuit device for connecting semiconductor region and electrical wiring metal via titanium silicide layer and method of fabrication thereof | Electricity | 4 | Expired |
| US7064437B2 | Semiconductor device having aluminum conductors | Electricity | 3 | Expired |
| US6300237A | Semiconductor integrated circuit device and method for making the same | Electricity | 2 | Expired |
| US6476492B2 | Semiconductor device having a capacitor and an interconnect layer with molybdenum-containing tungsten | Electricity | 2 | Expired |
| US6856021B1 | Semiconductor device having aluminum alloy conductors | Electricity | 2 | Expired |
| US6583049B2 | Semiconductor integrated circuit device and method for making the same | Electricity | 2 | Expired |
| US6617691B2 | Semiconductor device | Electricity | 2 | Expired |
| US6548904B2 | Semiconductor device having a capacitor and a metal interconnect layer with tungsten as a main constituent material and containing molybdenum | Electricity | 2 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.