NROM cell with improved programming, erasing and cycling
US6477084B2 · kind B2 · utility
130Cited by
87References
4Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 7, 2001 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Feb 7, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/26586
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A nitride programmable read only memory (NROM) cell with a pocket implant self-aligned to at least one bit line junction. Alternatively, the bit line junction(s) can have a thin area of effective programming and erasing located nearby. Further alternatively, the channel can have a threshold voltage level implant which has a low voltage level in a central area of the channel and which has a peak of high voltage level near at least one of the bit line junctions. With one pocket implant, the NROM cell stores one bit. With two pocket implants, the NROM cell stores two bits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.