Semiconductor memory device with over-driving sense amplifier
US6477100B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 22, 2001 |
| Grant date | Nov 5, 2002 |
| Priority date | — |
| Expiry date | Aug 22, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2207/065
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A sense amplifier capable of performing high-speed data sense operation with lower power consumption using a minuscule signal from a memory cell even in a case where a memory array voltage is reduced. A plurality of drive switches for over-driving are distributively arranged in a sense amplifier area, and a plurality of drive switches for restore operation are concentratively disposed at one end of a row of the sense amplifiers. A potential for over-driving is supplied using a meshed power line circuit. Through the use of the drive switches for over-driving, initial sense operation can be performed on data line pairs with a voltage having an amplitude larger than a data-line amplitude, allowing implementation of high-speed sense operation. The distributed arrangement of the drive switched for over-driving makes it possible to dispersively supply current in sense operation, thereby reducing a difference in sense voltage with respect to far and near positions of the sense amplifiers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.