Slurry for chemical mechanical polishing
US6478834B2 · kind B2 · utility
7Cited by
1References
17Claims
0Family size
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Key dates
| Filing date | Nov 20, 2001 |
| Grant date | Nov 12, 2002 |
| Priority date | — |
| Expiry date | Nov 20, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F3/00
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
By using a polishing slurry which comprises, at least, a polishing grain, an oxidizing agent and a higher-mono-primary amine, it is possible to suppress dishing and erosion liable to be produced in chemical mechanical polishing (CMP) for a copper-based metal film when forming a buried interconnection of a copper-based metal on a barrier metal film of a tantalum-based metal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.