Plasma chamber support having dual electrodes
US6478924B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2000 |
| Grant date | Nov 12, 2002 |
| Priority date | — |
| Expiry date | Mar 7, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T279/23
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A process chamber 110 capable of processing a substrate 50 in a plasma comprises a dielectric 210 covering a first electrode 220 and a second electrode 230, a conductor 250 supporting the dielectric 210, and a voltage supply 170 to supply an RF voltage to the first electrode 220 or the second electrode 230 in the dielectric 210. The first electrode 220 capacitively couples with a process electrode 225 to energize process gas in the process chamber 110 and RF voltage applied to the second electrode 230 is capacitively coupled to the conductor 250 and through a collar 260 or the second electrode 230 is directly capacitively coupled through the collar 260.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.