Method and apparatus for determining process layer conformality
US6479309B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | May 25, 2001 |
| Grant date | Nov 12, 2002 |
| Priority date | — |
| Expiry date | Jun 22, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/95684
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for determining conformality of a process layer includes providing a wafer having a grating structure and a process layer formed over the grating structure; illuminating at least a portion of the process layer overlying the grating structure with a light source; measuring light reflected from the illuminated portion of the grating structure and the process layer to generate a reflection profile; and determining conformality of the process layer based on the reflection profile. A metrology tool adapted to receive a wafer having a grating structure and a process layer formed over the grating structure includes a light source, a detector, and a data processing unit. The light source is adapted to illuminate at least a portion of the process layer overlying the grating structure. The detector is adapted to measure light reflected from the illuminated portion of the grating structure and the process layer to generate a reflection profile. The data processing unit is adapted to determine conformality of the process layer based on the generated reflection profile.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.