Marilyn I. Wright
25Patents
11h-index
31Co-inventors
67Inventor score
Filing activity: Jun 7, 2000 → Jan 30, 2008
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6893967B1 | L-shaped spacer incorporating or patterned using amorphous carbon or CVD organic materials | Electricity | 230 | Expired |
| US6716646B1 | Method and apparatus for performing overlay measurements using scatterometry | Electricity | 51 | Expired |
| US6764949B2 | Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabrication | Electricity | 42 | Expired |
| US6774998B1 | Method and apparatus for identifying misregistration in a complimentary phase shift mask process | Physics | 42 | Expired |
| US6900002B1 | Antireflective bi-layer hardmask including a densified amorphous carbon layer | Electricity | 25 | Expired |
| US6650423B1 | Method and apparatus for determining column dimensions using scatterometry | Physics | 24 | Expired |
| US6479309B1 | Method and apparatus for determining process layer conformality | Physics | 19 | Expired |
| US6509201B1 | Method and apparatus for monitoring wafer stress | Electricity | 18 | Expired |
| US6864556B1 | CVD organic polymer film for advanced gate patterning | Electricity | 14 | Expired |
| US7109101B1 | Capping layer for reducing amorphous carbon contamination of photoresist in semiconductor device manufacture; and process for making same | Electricity | 13 | Expired |
| US6458610B1 | Method and apparatus for optical film stack fault detection | Electricity | 13 | Expired |
| US6426262B1 | Method of analyzing the effects of shadowing of angled halo implants | Electricity | 10 | Expired |
| US6697153B1 | Method and apparatus for analyzing line structures | Physics | 8 | Expired |
| US7262864B1 | Method and apparatus for determining grid dimensions using scatterometry | Physics | 8 | Expired |
| US7861195B2 | Process for design of semiconductor circuits | Physics | 8 | Active |
| US6657716B1 | Method and apparatus for detecting necking over field/active transitions | Electricity | 7 | Expired |
| US6773939B1 | Method and apparatus for determining critical dimension variation in a line structure | Physics | 7 | Expired |
| US6766215B1 | Method and apparatus for detecting necking over field/active transitions | Electricity | 5 | Expired |
| US6972255B2 | Semiconductor device having an organic anti-reflective coating (ARC) and method therefor | Emerging Cross-Sectional Technologies | 5 | Expired |
| US6764947B1 | Method for reducing gate line deformation and reducing gate line widths in semiconductor devices | Electricity | 4 | Expired |
| US6913958B1 | Method for patterning a feature using a trimmed hardmask | Electricity | 4 | Expired |
| US6804014B1 | Method and apparatus for determining contact opening dimensions using scatterometry | Physics | 3 | Expired |
| US6261936A | Poly gate CD passivation for metrology control | Electricity | 2 | Expired |
| US7199429B2 | Semiconductor device having an organic anti-reflective coating (ARC) and method therefor | Emerging Cross-Sectional Technologies | 0 | Expired |
| US8039389B2 | Semiconductor device having an organic anti-reflective coating (ARC) and method therefor | Emerging Cross-Sectional Technologies | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.