Method of manufacturing a semiconductor device
US6479333B1 · kind B1 · utility
90Cited by
19References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 21, 2000 |
| Grant date | Nov 12, 2002 |
| Priority date | — |
| Expiry date | Mar 21, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02672
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A crystal growth 301 is carried out by diffusing a metal element, and a nickel element is moved into regions 108 and 109 which has been doped with phosphorus. An axis coincident with the moving directions 302 and 303 of the nickel element at this time is made to coincide with an axis coincident with the direction of the crystal growth, and a TFT having the regions as channel forming regions is manufactured. In the path of the region where nickel moved, since high crystallinity is obtained in the moving direction, the TFT having high characteristics can be obtained by this way.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.