Low defect organic BARC coating in a semiconductor structure
US6479879B1 · kind B1 · utility
9Cited by
15References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 3, 2001 |
| Grant date | Nov 12, 2002 |
| Priority date | — |
| Expiry date | Jan 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0276
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In providing a bottom antireflective coating (BARC) in a semiconductor structure, a primer layer, for example, hexamethyldisilazane (HMDS), is provided on a substrate, and the BARC is formed on the primer. This results in a substantially defect free BARC layer, having a more uniform reflectivity which in turn leads to improve to photolithographic pattern resolution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.